PART |
Description |
Maker |
BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE High Voltage Switching Diode
|
ON Semiconductor
|
MMBD7000LT1 |
Dual Switching Diode 200mA Surface Mount Switching Diode-100V
|
WILLAS ELECTRONIC CORP
|
KDS135 |
Switching Diode SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode SMD Switching Diode Dual: Opposing Polarity SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
CMEDA-6I |
SMD Switching Diode QUAD: MONOLITHIC SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY
|
CENTRAL[Central Semiconductor Corp]
|
IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
SMBD2835 SMBD2836 Q68000-A8436 Q68000-A8547 |
Silicon Switching Diode Array 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system Silicon Switching Diode Array with co...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
MMBD7000 MMBD7000-TP |
225mW 100Volt Dual Switching Diode DIODE SW DUAL 100V 150MA SOT23 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|